RB160L-60 diodes high frequency rectifier schottky barrier diode rb160l?60 ! applications high frequency rectification for switching power supply. ! features 1) small surface mounting type (pmds) 2) high reliability 3) low forward voltage (0.55v typ. @ 1a) ! construction silicon epitaxial planar ! external dimensions (units : mm) 0.1 cathode mark 4.5 0.2 2.6 0.2 2.0 0.2 1.2 0.3 1.5 0.2 5.0 0.3 + 0.02 ? 0.1 rohm : pmds jedec : sod-106 date of manufacture ex. RB160L-60 4,4 manufacture years ex. 1999.7 9,7 ! absolute maximum ratings (ta = 25 c) * when mounted on a pcbs board parameter symbol limits unit peak reverse voltage v rm 60 v dc reverse voltage v r 60 v mean rectifying current * i o 1a peak forward surge current i fsm 30 a junction temperature tj 125 c tstg c storage temperature ? 40 + 125 ! electrical characteristics (ta = 25 c) parameter symbol min. typ. max. unit conditions forward voltage v f 0.55 0.58 v reverse current i r ? 0.0035 0.5 ma v r = 60v i f = 1.0a ?
RB160L-60 diodes ! electrical characteristic curves (ta = 25 c unless specified otherwise) fig.1 forward characteristics 0 1m 10m 100m 1 10 0.4 0.6 0.8 forward current : i f (a) forward voltage : v f (v) 0.1 0.2 0.3 0.5 0.7 125 c 75 c 25 c ? 25 c fig.2 reverse characteristics 0 100n 1m 10m 10 20 30 40 50 60 reverse current : i r (a) reverse voltage : v r (v) 70 1 n 10 n 1 10 100 ? 25 c 25 c 75 c 125 c fig.3 capacitance between terminals characteristics 35 0 5 10 15 20 25 30 1n 100 10 reverse voltage : v r (v) terminal capacitance : c t (pf) fig.4 derating curve (lo-ta) 0 1.0 0.0 dc average rectified foward current : io (a) ambient temperature : ta (c) 25 50 75 100 125 2.0 d = 0.05 d = 0.1 d = 0.2 d = 0.3 sine wave d = 0.5 d = 0.8 fig.5 derating curve (lo-tc) 0 1.0 0.0 dc average rectified foward current : io (a) case temperature : tc(c) 25 50 75 100 125 2.0 d = 0.05 d = 0.1 d = 0.2 d = 0.3 sine wave d = 0.5 d = 0.8
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